Deposition of a dielectric layer onto tungsten electrodes and analysis of their properties

FCH/FEKT-J-23-8203
Project leader
Description

The aim of the project is to create a dielectric layer to harness the benefits of resonant quantum tunneling during field emission. Tungsten, a robust material, is chosen, and an oxide layer will be created using the available method of anodization. Besides the advantages of the metal-thin oxide combination, we can also test the benefits of the metal-oxide-metal layer by adding a gold layer. This research will contribute to a deeper understanding of electron emitters, which are essential elements in technological applications such as electron microscopes.