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Al2O3/HfO2 heterogeneous capacitor on a chip

Published : 2019
Autors: Ing. Radim Hrdý, Ph.D. , Ing. Jan Prášek, Ph.D. , Ing. Silvestr Vančík , prof. Dr. Ulrich Schmid , doc. Ing. Jaromír Hubálek, Ph.D.

Key words:
capacitor, chip, higk-k dielectrics, ALD


It is a planar capacitor with a heterogeneous dielectric structure with a nominal thickness of 10 nm. The dielectric consists of alternating layers of Al2O3 and HfO2 with thicknesses of ~ 1 nm, deposited by means of atomic layer deposition (ALD). Capacitors are placed on the silicon substrate-chip forming the bottom electrode. The upper electrode consists of 250 nm of evaporated gold. This electrode is made by Lift-Off method. Variable area capacitors are grouped on a chip in the form of a test field.


Test field of capacitors, capacitor in detail and crossection (left), TEM image of dielectric structure (right).


Chip size: 12 × 12 mm

Capacitors size: diameter 200 ÷ 3000 µm

Thickness of dielectric: 10 nm

Capacity: ~1×10-12 F.µm-2

Leakage current: ~1×10-9 A.cm-2


LO1401 (INWITE) , GAČR GA17-27340S



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